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tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 1 of 13 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? point-to-point radio ? x-band communications qfn 5x5mm 24l product features functional block diagram ? frequency range: 10 ? 12 ghz ? toi: 43 dbm ? power: 34.5 dbm psat, 33 dbm p1db ? gain: 24 db ? return loss: 15 db ? integrated power detector ? bias: vd = 6 v, id = 1.3 a, vg = -0.55 v typical ? package dimensions: 5.0 x 5.0 x 0.85 mm general description pin configuration the triquint tga2535-sm is a x-band packaged power amplifier. the tga2535-sm operates from 10 to 12 ghz and is designed using triquint?s power phemt production process. the tga2535-sm typically provides 43dbm of toi at 20dbm pout/tone, 33 dbm of output power at 1db gain compression, and the small signal gain is 24 db. the tga2535-sm is available in a low-cost, surface mount 24 lead 5x5 qfn package and is ideally suited for point-to-point radio, and x-band communications. lead-free and rohs compliant evaluation boards are available upon request. pin # symbol 1, 2, 3, 5, 6, 9, 12, 13, 14, 15, 17 n/c 4 rf in 7, 8, 23, 24 vg 16 rf out 10, 11, 20, 21 vd 18 vref 19 vdet 22 gnd ordering information part no. eccn description tga2535-sm 3a001.b.2.b x-band power amplifier standard t/r size = 500 pieces on a 7? reel. 1 2 3 9 8 7 4 5 6 12 11 10 18 17 16 15 14 13 22 23 24 19 20 21
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 2 of 13 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain voltage,vd +8 v gate voltage,vg -3 to 0 v drain current, id 2.24 a gate current, ig -11 to 90 ma power dissipation, pdiss 17.9 w rf input power, cw, 50 ? ,t = 25oc 27 dbm channel temperature, tch 200 o c mounting temperature (30 seconds) 260 o c storage temperature -40 to 150 o c operation of this device outsi de the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional opera tion of the device at these conditions is not implied. recommended operating conditions parameter min typical max units vd 6 v id 1.3 a id_drive (under rf drive) 1.6 a vg -0.55 v electrical specifi cations are measured at sp ecified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25oc, vd = 6 v, id = 1.3 a, vg = -0.55 v typical . parameter min typical max units operational frequency range 10.0 12.0 ghz gain 20.5 24 db input return loss -15 -10 db output return loss -15 -12 db output power @ saturation 33 34.5 dbm output power @ 1 db gain compression 31.5 33 dbm output toi @ pout/tone = 20 dbm 41 43 dbm noise figure 10 db gain temperature coefficient -0.031 db/c power temperature coefficient -0.004 dbm/c
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 3 of 13 - disclaimer: sub j ect to chan g e without notice specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of package tbase = 85 c jc = 5.77 c/w channel temperature (tch), and median lifetime (tm) tbase = 85 c, vd = 6 v, id = 1.3 a, pdiss = 7.8 w tch = 130 c tm = 5.9 e+6 hours channel temperature (tch), and median lifetime (tm) under rf drive tbase = 85 c, vd = 6 v, id = 1.6 a, pout = 34.5 dbm, pdiss = 6.78 w tch = 124 c tm = 1.0 e+7 hours 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 1.e+14 25 50 75 100 125 150 175 200 median lifetime, tm, (hours) channel temperature, tch, (c) median lifetime (tm) vs. channel temperature (tch) fet3 ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 4 of 13 - disclaimer: sub j ect to chan g e without notice typical performance ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 16 18 20 22 24 26 28 30 32 34 36 -10-8-6-4-202468101214 id (a) output power (dbm), gain (db) input power (dbm) power, gain, id vs. input power @ 10 ghz vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c power gain id 29 30 31 32 33 34 35 36 9.5 10 10.5 11 11.5 12 12.5 output power (dbm) frequency (ghz) power vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c psat p1db 0.001 0.01 0.1 1 10 -5 0 5 10 15 20 25 30 35 vdiff (v) output power (dbm) power detector vs. pout vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c 10ghz 11ghz 11.7ghz 0 2 4 6 8 10 12 14 9.5 10 10.5 11 11.5 12 12.5 noise figure (db) frequency (ghz) noise figure vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c 0 4 8 12 16 20 24 28 14 16 18 20 22 24 26 28 9 9.5 10 10.5 11 11.5 12 12.5 13 return loss (db) gain (db) frequency (ghz) s-parameters vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c gain irl orl 14 16 18 20 22 24 26 28 30 32 9.5 10 10.5 11 11.5 12 12.5 power added efficency (%) frequency (ghz) pae vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c pae @ psat pae @ p1db
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 5 of 13 - disclaimer: sub j ect to chan g e without notice typical performance (cont.) ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? 36 37 38 39 40 41 42 43 44 45 46 9.5 1010.51111.51212.5 output toi (dbm) frequency (ghz) toi vs. frequency vs. pout/tone vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c pout/tone = 21dbm pout/tone = 20dbm pout/tone = 19dbm -90 -85 -80 -75 -70 -65 -60 -55 -50 13 14 15 16 17 18 19 20 21 22 23 im5 (dbc) pout/tone (dbm) im5 vs. pout/tone vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c 10.0ghz 11.0ghz 11.7ghz 12.0ghz 14 16 18 20 22 24 26 28 9 9.5 10 10.5 11 11.5 12 12.5 13 gain db frequency (ghz) gain vs. frequency vs. id vd = 6 - 6.5 v, id = 0.9 - 1.3 a, +25 0 c 6v 1.3a 6v 1.1a 6v 0.9a 6.5v 1.0a 29 30 31 32 33 34 35 36 9.5 10 10.5 11 11.5 12 12.5 psat (dbm) frequency (ghz) saturated power vs. frequency vs. id vd = 6 - 6.5 v, id = 0.9 - 1.3 a, +25 0 c 6v 1.3a 6v 1.1a 6v 0.9a 6.5v 1.0a 29 30 31 32 33 34 35 36 9.5 10 10.5 11 11.5 12 12.5 p1db (dbm) frequency (ghz) p1db vs. frequency vs. id vd = 6 - 6.5 v, id = 0.9 - 1.3 a, +25 0 c 6v 1.3a 6v 1.1a 6v 0.9a 6.5v 1.0a -70 -65 -60 -55 -50 -45 -40 -35 -30 13 14 15 16 17 18 19 20 21 22 23 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c 10.0ghz 11.0ghz 11.7ghz 12.0ghz
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 6 of 13 - disclaimer: sub j ect to chan g e without notice typical performance (cont.) ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? 29 30 31 32 33 34 35 36 9.5 10 10.5 11 11.5 12 12.5 p1db (dbm) frequency (ghz) p1db vs. frequency vs. temperature vd = 6 v, id = 1.3 a, vg = -0.55 v typical 36 37 38 39 40 41 42 9.5 10 10.5 11 11.5 12 12.5 otoi @ 20 dbm pout/ frequency (ghz) 43 44 45 46 tone (dbm) toi vs. frequency vs. bias vd = 6 - 6.5 v, id = 0.9 - 1.3 a, +25 0 c 6v 1.3a 6v 1.1a 6v 0.9a 6.5v 1.0a 0 2 4 6 8 10 12 14 9.5 10 10.5 11 11.5 12 12.5 noise figure (db) frequency (ghz) noise figure vs. frequency vs. bias vd = 6 - 6.5 v, id = 0.9 - 1.3 a, +25 0 c 6v 1.3a 6v 1.1a 6v 0.9a 6.5v 1.0a -40c +25c +85c 28 gain vs. frequency vs. temperature vd = 6 v, id = 1.3 a, vg = -0.55 v typical 14 16 18 20 22 24 26 9 9.5 10 10.5 11 11.5 12 12.5 13 gain (db) frequency (ghz) 29 30 31 32 33 34 35 36 9.5 10 10.5 11 11.5 12 12.5 psat (dbm) frequency (ghz) psat vs. frequency vs. temperature vd = 6 v, id = 1.3 a, vg = -0.55 v typical -40c -40c +25c +25c +85c +85c 36 37 38 39 40 41 42 43 44 45 46 9.5 10 10.5 11 11.5 12 12.5 otoi @ 20 dbm pout/tone (dbm) frequency (ghz) toi vs. frequency vs. temperature vd = 6 v, id = 1.3 a, vg = -0.55 v typical -40c +25c +85c
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 7 of 13 - disclaimer: sub j ect to chan g e without notice application circuit ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? vg can be biased from either side (pins 7 and 8 or pins 23 and 24), and the non-biased side can be left open. vd must be biased from both sides (pins 10, 11, 20, and 21). bias-up procedure bias-down procedure vg set to -1.5 v turn off rf supply vd set to +6 v reduce vg to -1.5v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 1.3a. this will be ~ vg = -0.55 v turn vd to 0 v apply rf signal to rf input turn vg to 0 v the tga2535-sm will be marked with the ?2535? designator and a lot code marked below the part designator. the ?yy? represents the last two digits of the year the part was manuf actured, the ?ww? is the work w eek, and the ?xxxx? is an auto- generated number. 1 2 3 9 8 7 4 5 6 12 11 10 18 17 16 15 14 13 22 23 24 19 20 21 100k ohms r1 rf in j1 rf out j2 vg = -0.55 v typical c2 1 uf 100 pf c5 100 pf vd = 6 v id = 1.3 a c1 1 uf 100 pf c4 c3 100k ohms r2 + _ 6 v vdiff vdet vref 2535 yyww xxxx 1 uf c6
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 8 of 13 - disclaimer: sub j ect to chan g e without notice pin description 1 2 3 9 8 7 4 5 6 12 11 10 18 17 16 15 14 13 22 23 24 19 20 21 25 pin symbol description 1, 2, 3, 5, 6, 13, 14, 15, 17 n/c no internal connection; must be grounded on pcb 4 rf in input, matched to 50 ohms 7, 8, 23, 24 vg gate voltage. esd protection included; bias network is required; can be biased from either side (pins 7 and 8 or pins 23 and 24), and non-biased side can be left opened; see application circuit on page 7 as an example. 9, 12 n/c no internal connection; can be grounded on pcb or left open 10, 11, 20, 21 vd drain voltage. bias network is required; must be biased from both sides; see application circuit on page 7 as an example. 16 rf out output, matched to 50 ohms 18 vref reference diode output voltage 19 vdet detector diode output voltage; varies with rf output power 22 gnd internal grounding; can be grounded on pcb or left open 25 gnd backside paddle. multiple vias should be employed to minimize inductance and thermal resistance; see mounting conf iguration on page 11 for suggested footprint. ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 9 of 13 - disclaimer: sub j ect to chan g e without notice applications information pc board layout top rf layer is 0.008? thick rogers ro4003, ? r = 3.38. metal layers are 1-oz copper. microstrip 50 ? line detail: width = 0.0175?. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes vary from company to company, careful process development is recommended. for further technical information, refer to the tga2533-sm product information page. r1 c1 r2 c2 c3 c5 c6 c4 bill of material ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? ref des value description manufacturer part number c1, c2, c3 100 pf cap, 0402, 50 v, 5%, cog various c4, c5, c6 1 uf cap, 0603, 25 v, 10%, x5r various r1, r2 100k ohms res, 0603, 0.1 w, 5%, smd various
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 10 of 13 - disclaimer: sub j ect to chan g e without notice mechanical information package information and dimensions all dimensions are in millimeters. this package is lead-free/rohs-compliant with a copper alloy base (cda194), and the plating material on the leads is 100% matte sn. it is compatible with both lead-free (maximum 260 c reflow temperature) and tin-lead (maximum 245 c reflow temperature) soldering processes. ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 11 of 13 - disclaimer: sub j ect to chan g e without notice mechanical information (cont.) mounting configuration .675 .675 all dimensions are in millimeters (inches). notes: 1. a heatsink underneath the area of the pcb for the mounted device is recommended for proper thermal operation. 2. ground / thermal vias are critical for th e proper performance of this device. vias have a final plated thru diameter of .40 mm (.016?). tape and reel information tape and reel specifications for this part are also available on the triquint website in the ?application notes? section. standard t/r size = 500 pieces on a 7? x 0.5? reel. carrier and cover tape dimensions ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? part feature symbol size (in) size (mm) cavity length a0 0.207 5.25 width b0 0.207 5.25 depth k0 0.043 1.10 pitch p1 0.315 8.00 distance between centerline cavity to perforation p2 0.079 2.00 length direction cavity to perforation f 0.217 5.50 width direction cover tape width c 0.374 9.5 carrier tape width w 0.472 12.0
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 12 of 13 - disclaimer: sub j ect to chan g e without notice product compliance information esd information esd rating: class 0 value: 200 v and < 250 v ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? test: human body model (hbm) standard: jedec standard jesd22-a114 solderability compatible with the latest version of j-std-020, lead free solder, 260c this part is compliant with eu 2002/95/ec rohs directive (restrictions on th e use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: x lead free x halogen free (chlorine, bromine) x antimony free x tbbp-a (c 15 h 12 br 4 0 2 ) free x pfos free x svhc free msl rating level 1 at +260 c convection reflow the part is rated mois ture sensitivity level 1 at 260c per jedec standard ipc/jedec j-std-020. eccn us department of commerce 3a001.b.2.b recommended soldering temperature profile
tga2535-sm x-band power amplifier data sheet: rev a 10/25/11 - 13 of 13 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information abou t triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@tqs.com fax: +1.972.994.8504 f or technical questions and application information: email: info-networks@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatso ever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and th e entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any part y any patent rights, licenses, or any other intellectual prope rty rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reason ably be expected to cause severe personal injury or death.

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